ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR439 ELECTRICAL CHARACTERISTICS
V IN = 6.5 V to 18 V, I L = 0 mV, T A = 25°C, unless otherwise noted.
Table 7.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
OUTPUT VOLTAGE
V O
A Grade
B Grade
4.4946
4.498
4.500
4.500
4.5054
4.502
V
V
INITIAL ACCURACY 1
V OERR
A Grade
B Grade
TEMPERATURE COEFFICIENT
TCV O
±5.5
±0.12
±2
±0.04
mV
%
mV
%
A Grade
B Grade
?40°C < T A < +125°C
?40°C < T A < +125°C
2
1
10
3
ppm/°C
ppm/°C
LINE REGULATION
LOAD REGULATION
QUIESCENT CURRENT
VOLTAGE NOISE
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY 2
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
SUPPLY VOLTAGE OPERATING RANGE
SUPPLY VOLTAGE HEADROOM
?V O /?V IN
?V O /?I L
?V O /?I L
I IN
e N p-p
e N
t R
?V O
V O_HYS
RRR
I SC
V IN
V IN ? V O
V IN = 6.5 V to 18 V, ?40°C < T A < +125°C
I L = 0 mA to 10 mA, V IN = 6.5 V, ?40°C < T A < +125°C
I L = ?10 mA to 0 mA, V IN = 6.5 V, ?40°C < T A < +125°C
No load, ?40°C < T A < +125°C
0.1 Hz to 10.0 Hz
1 kHz
C L = 0 μF
1000 hours
f IN = 1 kHz
6.5
2
5
600
7.5
110
10
40
20
?70
40
20
15
15
800
18
ppm/V
ppm/mA
ppm/mA
μA
μV p-p
nV/√Hz
μs
ppm
ppm
dB
mA
V
V
1
2
Initial accuracy does not include shift due to solder heat effect.
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
Rev. J | Page 9 of 24
相关PDF资料
GEM28DTAD-S189 CONN EDGECARD 56POS R/A .156 SLD
ADR435BRMZ IC VREF SERIES PREC 5V 8-MSOP
RBM08DTBN CONN EDGECARD 16POS R/A .156 SLD
RBM08DTBH CONN EDGECARD 16POS R/A .156 SLD
ZXRE1004DN8TA IC VREF SHUNT PREC 1.22V 8-SO
B82559A0501A013 INDUCTOR POWER .50UH 30A SMD
EBM22DTBN-S189 CONN EDGECARD 44POS R/A .156 SLD
MIC2549A-1BM IC SW CURR LIMIT HI SIDE 8-SOP
相关代理商/技术参数
ADR431BRMZ-R7 功能描述:IC VREF SERIES PREC 2.5V 8MSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 电压基准 系列:XFET® 标准包装:2,000 系列:- 基准类型:旁路,可调节,精度 输出电压:1.24 V ~ 16 V 容差:±0.5% 温度系数:- 输入电压:1.24 V ~ 16 V 通道数:1 电流 - 阴极:100µA 电流 - 静态:- 电流 - 输出:20mA 工作温度:-40°C ~ 85°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3(TO-226AA)成形引线 供应商设备封装:TO-92-3 包装:带卷 (TR)
ADR431BR-REEL7 功能描述:IC VREF SERIES PREC 2.5V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 电压基准 系列:XFET® 标准包装:3,000 系列:- 基准类型:旁路,精度 输出电压:5V 容差:±0.5% 温度系数:100ppm/°C 输入电压:- 通道数:1 电流 - 阴极:80µA 电流 - 静态:- 电流 - 输出:15mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3 包装:带卷 (TR) 其它名称:LM4040CIM3-5.0MLTRLM4040CIM3-5.0MLTR-ND
ADR431BRZ 功能描述:IC VREF SERIES PREC 2.5V 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 电压基准 系列:XFET® 标准包装:3,000 系列:- 基准类型:旁路,精度 输出电压:3V 容差:±0.5% 温度系数:100ppm/°C 输入电压:- 通道数:1 电流 - 阴极:82µA 电流 - 静态:- 电流 - 输出:15mA 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:6-TSSOP(5 引线),SC-88A,SOT-353 供应商设备封装:SC-70-5 包装:带卷 (TR) 其它名称:296-20888-2
ADR431BRZ 制造商:Analog Devices 功能描述:REFERENCE VOLTAGE:2.5V
ADR431BRZ-REEL7 功能描述:IC VREF SERIES PREC 2.5V 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 电压基准 系列:XFET® 标准包装:2,000 系列:- 基准类型:旁路,可调节,精度 输出电压:1.24 V ~ 16 V 容差:±0.5% 温度系数:- 输入电压:1.24 V ~ 16 V 通道数:1 电流 - 阴极:100µA 电流 - 静态:- 电流 - 输出:20mA 工作温度:-40°C ~ 85°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3(TO-226AA)成形引线 供应商设备封装:TO-92-3 包装:带卷 (TR)
ADR431TRZ-EP 制造商:Analog Devices 功能描述:V-Ref Precision 2.5V 10mA 8-Pin SOIC N Tube 制造商:Analog Devices 功能描述:ENHANCED PLASTIC PROCESS - Rail/Tube 制造商:Analog Devices Inc. 功能描述:Voltage & Current References Enhanced Plastic Process 制造商:Analog Devices 功能描述:IC, VOLT REF, 2.5V, 1.5ppm/C 3mV SOIC-8; Topology:Series; Input Voltage Min:4.5V; Input Voltage Max:18V; Reference Voltage:2.5V; Reference Voltage Tolerance:3mV; Voltage Reference Case Style:SOIC; No. of Pins:8 ;RoHS Compliant: Yes 制造商:Analog Devices 功能描述:Voltage Ref. 2.5V 0.04% Low Noise SOIC8
ADR431TRZ-EP-R7 制造商:Analog Devices 功能描述:V-Ref Precision 2.5V 10mA 8-Pin SOIC N T/R 制造商:Analog Devices 功能描述:ENHANCED PLASTIC PROCESS - Tape and Reel 制造商:Analog Devices 功能描述:IC VREF SERIES 2.5V 8-SOIC 制造商:Analog Devices Inc. 功能描述:Voltage & Current References Enhanced Plastic Process
ADR433 制造商:AD 制造商全称:Analog Devices 功能描述:Ultralow Noise XFET Voltage References with Current Sink and Source Capability